Renesas Electronics Unveils its 8th Generation-Ultra-Low Loss IGBTs

In comparison to previous IGBT generations, these devices provide faster switching performance, an essential feature to the IGBT performance index, while also reducing conduction loss by lowering the saturation voltage

Apac CIOOutlook | Wednesday, March 16, 2016

TOKYO, JAPAN: Renesas Electronics, a supplier of advanced semi-conductor solutions, announces the availability of six new products in the line-up of its 8^th generation of G8H series of insulated gate bipolar transistors (IGBTs).

The new IGBTS minimizes the conversion losses in power conditioners for solar power generation systems and reduces inverter applications in uninterruptable power supply (UPS) systems.

Six new product versions are released by Renesas including the industry’s first TO-247 plus package for a 1,250V IGBT with built-in diode, which offers system manufacturers greater circuit configuration flexibility.

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The 8^th generation of Renesas electronics’ IGBTs adopts an exclusive trench gate configuration in the process structure. In comparison to previous IGBT generations, these devices provide faster switching performance, an essential feature to the IGBT performance index, while also reducing conduction loss by lowering the saturation voltage.

Additionally, the performance index for the 8th-generation devices has been improved by up to 30 percent compared to previous 7th-generation IGBTs, contributing to lower power loss and better overall performance for user systems. These updates are essential for key markets in the power industry focusing on photovoltaic (PV) inverters, UPS, industrial motor drives and power factor correction (PFC).

In solar power generation systems, there is some amount of power loss when the direct current (DC) generated from sunlight by solar panels converts to alternating current (AC) by passing through an inverter circuit. Since the majority of this power loss occurs within the power devices used, reducing IGBT power loss has a direct positive effect on the power generation performance of user systems. Also UPS systems in server rooms and data centers- power must constantly pass through a power converter circuit to monitor if the power supply has been interrupted implying that a steady power loss arises whenever the system is operating. IGBT performance is again key to reducing this power loss.

Key Features Include:

Faster switching, industry-leading ultra-low power loss features ideal for inverter circuits

The new IGBTs can achieve both fast switching performance and low saturation voltage (Vce (sat)) features, which determine the performance index of IGBT devices. This results in the performance index improving by up to 30 percent. In addition, Renesas analyzed the elements contributing to power loss in inverter circuits and designed the new devices to minimize conduction and switching loss. This substantially reduces IGBT power loss, which accounts for more than half of the overall power loss in power converter circuits.

Eliminated external gate resistors thanks to low switching noise

The new IGBTs generate substantially less gate noise during switching as compared to previously made IGBT. This enables system manufacturers to eliminate the need for gate resistors previously utilized to reduce noise.

The TO-247 package with excellent heat dissipation; operation guaranteed at high temperatures up to 175°C

The underside of the TO-247 package is formed from metal, allowing heat generated by IGBT power loss to be conveyed directly to the package exterior for superior heat dissipation performance. The new devices are compatible with high temperatures up to 175°C, so they can be used in locations that tend to heat up due to the transmission of large power levels. This helps to improve the performance and reliability of user systems.

Industry’s-First 1,250 V IGBT with built-in diode in a TO-247 plus discrete-package version available for 75 A current band rated at 100C

Previously, devices in the 75 A current band were generally incorporated into modules employing large packages due to considerations such as heat, noise, and operating quality. With the new IGBT technology that achieves low loss and smaller chip size, Renesas realizes a 1,250 V IGBT with built-in diode in a discrete TO-247 plus package as first in the industry. By using discrete-package devices in the 75 A current band rated at 100C, system manufacturers can enjoy the increased circuit configuration flexibility that only discrete devices provide and can easily increase the power capacity of their systems.

These IGBTs can also be used for step-up circuits in converters besides previously being used only for inverter circuits.

Check Out:- SemiConductor Review

See Also: Energy Tech Review

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