Samsung’s V-NAND Impends to Transform the Storage System Technology

SEOUL, SOUTH KOREA: Samsung Electronics introduces a blueprint for next-generation flash memory solutions; the 4th generation Vertical NAND (V-NAND), a high-capacity solid state drives (SSDs) for enterprise customers as well as Z-SSD, a new and advanced solution providing flash-based storage.

The new storage device is being developed keeping in mind the escalating demand for big data networks, cloud computing and real-time analysis. Aiming mainly at the global IT industry to meet the growing storage requirements, the device is being built to accommodate massive amount of data, perform extremely high-speed information processing, while reducing the total cost of ownership (TCO) for data centres.

4th Generation V-NAND

The 64-layer triple-level-cell V-NAND flash memory will be giving a new dimension to NAND in terms of performance and storage capacity with its IO speed to 800Mbps and a storage capacity of 512 GB unlike the previous threegenerations of V-NAND products with 24, 32 and 48-layer vertical cell-array stacking technologies. This intends to help manufacturers produce faster, more stylish and portable computing devices, while at the same time offer consumers a more responsive computing environment.

High-Capacity SSDs

The 32TB SAS (Serial Attached SCSI) SSD based on 512 GB V-NAND chips stacked in 16 layers to form a 1TB package and the 32 TB SSD contains 32 of those packages, which will come in a 2-5-inch form factor . This can reduce system space requirements by up to 40 times compared to the same type of system using two racks of HDDs.

Z-SSD

The ultra-low latency SSD solution, Z-SSD, have a unique circuit design and controller which can maximize performance by four times. It shares the basic structure of V-NAND and has a unique circuit design and controller that can maximize performance, with four times faster latency. This will be used in systems that deal with extremely intensive real-time analysis as well as extending high performance to all types of workloads.

“With our 4^th generation V-NAND technology, we can provide leading-edge differentiated values in high-capacity, high-performance and compact product dimensions, which together will contribute to our customers achieving better TCO results,” says Young-Hyun Jun, President of the Memory Business at Samsung Electronics. “We will continue to introduce more advanced V-NAND solutions and expand our flash business initiatives in maximizing an unbeatable combination of performance and value.”